型号：NCE120ED120VTP；Package：TO-247P-3L；1200V, 120A, Trench FS Gen.7 IGBT

General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench Field Stop Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench Field Stop Gen.7 Technology

文件：1.22699 Mbytes 页数：9 Pages

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

型号：NCE120ED120VTP4；Package：TO-247P-4L；1200V, 120A, Trench FS Gen.7 IGBT

General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench Field Stop Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench Field Stop Gen.7 Technology

文件：1.1386 Mbytes 页数：8 Pages

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

型号：NCE120ED120VTP；Package：TO-247P-3L；1200V, 120A, Trench FS Gen.7 IGBT

General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench Field Stop Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench Field Stop Gen.7 Technology

文件：1.22699 Mbytes 页数：9 Pages

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

型号：NCE120ED120VTP4；Package：TO-247P-4L；1200V, 120A, Trench FS Gen.7 IGBT

General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench Field Stop Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench Field Stop Gen.7 Technology

文件：1.1386 Mbytes 页数：8 Pages

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司