NCE4015S

Marking：NCE4015S；Package：SOP-8；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE4015Susesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=40V,ID=15A RDS(ON)

NCE4090G

Marking：NCE4090G；Package：DFN5X6-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE4090Gusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=40V,ID=90A RDS(ON)

NCE4090K

Marking：NCE4090K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE4090Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=40V,ID=90A RDS(ON)=4.2mΩ@VGS=10V(Typ) RDS(ON)=7.2mΩ@VGS=4.5V(Typ) ●Highdensitycell

NCE40ED120VT

Marking：NCE40ED120VT；Package：TO-247-3L；1200V 40A Trench FS Gen.7 IGBT

GeneralDescription UsingNCE'sproprietaryhighdensitytrenchgatedesignandadvancedFS (FieldStop)Gen.7technology,the650VTrenchFSGen.7IGBTofferssuperior conductionandswitchingperformances,andeasyparalleloperation; Features TrenchFieldStopGen.7TechnologyOffering

NCE40ED65VT

Marking：NCE40ED65VT；Package：TO-247-3L；650V 40A Trench FS Gen.7 IGBT

GeneralDescription UsingNCE'sproprietaryhighdensitytrenchgatedesignandadvancedFS (FieldStop)Gen.7technology,the650VTrenchFSGen.7IGBTofferssuperior conductionandswitchingperformances,andeasyparalleloperation. Features TrenchfieldstopGen.7TechnologyOffering

NCE40ER65BP

Marking：NCE40ER65BP；Package：TO-3P；650V, 40A, Trench FS III Fast IGBT

GeneralDescription UsingNCE'sproprietarytrenchdesignandadvancedFS(FieldStop)second generationtechnology,the650VTrenchFSIIIIGBTofferssuperiorconductionand switchingperformances,andeasyparalleloperation; Features TrenchFSIIITechnologyoffering VerylowVCE(sa

NCE40ER65BPF

Marking：NCE40ER65BPF；Package：TO-3PF；650V, 40A, Trench FS III Fast IGBT

GeneralDescription UsingNCE'sproprietarytrenchdesignandadvancedFS(FieldStop)second generationtechnology,the650VTrenchFSIIIIGBTofferssuperiorconductionand switchingperformances,andeasyparalleloperation; Features TrenchFSIIITechnologyoffering VerylowVCE(sa

NCE40ER65BT

Marking：NCE40ER65BT；Package：TO-247；650V, 40A, Trench FS III Fast IGBT

GeneralDescription UsingNCE'sproprietarytrenchdesignandadvancedFS(FieldStop)second generationtechnology,the650VTrenchFSIIIIGBTofferssuperiorconductionand switchingperformances,andeasyparalleloperation; Features TrenchFSIIITechnologyoffering VerylowVCE(sa

NCE40H10K

Marking：NCE40H10K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE40H10Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=40V,ID=100A RDS(ON)

NCE40H11

Marking：NCE40H11；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE40H11usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=40V,ID=110A RDS(ON)