NCE30P28Q

Marking：NCE30P28Q；Package：DFN3.3X3.3-8L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE30P28Qusesadvancedtrenchtechnologytoprovide excellentRDS(ON),Thisdeviceissuitableforuseasaloadswitchor powermanagement.Application ●Powermanagement●Loadswitch GeneralFeatures ●VDS=-30V,ID=-28A RDS(ON)

NCE30P30G

Marking：NCE30P30G；Package：DFN5X6-8L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE30P30Gusesadvancedtrenchtechnologytoprovide excellentRDS(ON),Thisdeviceissuitableforuseasaload switchorinPWMapplications. GeneralFeatures ●VDS=-30V,ID=-30A RDS(ON)

NCE30P30K

Marking：NCE30P30K；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE30P30Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceiswellsuitedforhighcurrentloadapplications. GeneralFeatures ●VDS=-30V,ID=-30A RDS(ON)

NCE30P30L

Marking：NCE30P30L；Package：TO-25IS；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE30P30Lusesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceis wellsuitedforhighcurrentloadapplications. GeneralFeatures ●VDS=-30V,ID=-30A RDS(ON)

NCE30P40K

Marking：NCE30P40K；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE30P40Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceiswellsuitedforhighcurrentloadapplications. GeneralFeatures ●VDS=-30V,ID=-40A RDS(ON)=7.8mΩ@VGS=-10V(Typ) RDS(ON)=11.5mΩ@VGS=-4.5V(Ty

NCE30P55K

Marking：NCE30P55K；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE30P55Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceiswellsuitedforhighcurrentloadapplications.GeneralFeatures ●VDS=-30V,ID=-55A RDS(ON)

NCE30P55L

Marking：NCE30P55L；Package：TO-251S；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE30P55Lusesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceis wellsuitedforhighcurrentloadapplications. GeneralFeatures ●VDS=-30V,ID=-55A RDS(ON)

NCE30P60G

Marking：NCE30P60G；Package：DFN5x6；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE30P60Gusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=-30V,ID=-60A RDS(ON)

NCE30P85K

Marking：NCE30P85K；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE30P85Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceiswellsuitedforhighcurrentloadapplications. GeneralFeatures ●VDS=-30V,ID=-85A RDS(ON)=5.3mΩ@VGS=-10V(Typ) RDS(ON)=7.6mΩ@VGS=-4.5V(Typ

NCE30TD120UT

Marking：NCE30TD120UT；Package：TO-247；1200V, 30A, Trench FS II Fast IGBT

GeneralDescription: UsingNCE'sproprietarytrenchdesignandadvancedFS(FieldStop)second generationtechnology,the1200VTrenchFSIIIGBTofferssuperiorconductionand switchingperformances,andeasyparalleloperation; Features ⚫TrenchFSIITechnologyOffering ⚫VerylowVCE(sat