NCE30H12AK

Marking：NCE30H12AK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE30H12AKusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=30V,ID=120A RDS(ON)

NCE30H14K

Marking：NCE30H14K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE30H14Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=30V,ID=140A RDS(ON)

NCE30H15B

Marking：NCE30H15B；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE30H15Busesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=30V,ID=150A RDS(ON)

NCE30H15BG

Marking：NCE30H15BG；Package：PDFN5X6-8；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE30H15BGusesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Itcanbeusedin awidevarietyofapplications. Application ●DC/DCConverter ●Idealforhigh-frequencyswitchingandsynchronousrectification GeneralFeatures

NCE30H15BK

Marking：NCE30H15BK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE30H15BKusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=30V,ID=150A RDS(ON)

NCE30H28

Marking：NCE30H28；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE30H28usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=30V,ID=280A RDS(ON)

NCE30H29D

Marking：NCE30H29D；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE30H29Dusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=30V,ID=290A RDS(ON)

NCE30H33LL

Marking：NCE30H33LL；Package：TOLL；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE30H33LLusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.Application ●Powerswitchingapplication ●Hardswitchedandhighfrequencycircuits ●Uninterruptiblepowersupply

NCE30ND35Q

Marking：NCE30ND35Q；Package：PDFN3.3X3.3-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE30ND35Qusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=30V,ID=35A RDS(ON)

NCE30NP07S

Marking：NCE30NP07S；Package：SOP-8；N and P-Channel Enhancement Mode Power MOSFET

Description TheNCE30NP07Susesadvancedtrenchtechnologyto provideexcellentRDS(ON)andlowgatecharge.The complementaryMOSFETsmaybeusedtoformalevelshifted highsideswitch,andforahostofotherapplications. GeneralFeatures ●N-Channel VDS=30V,ID=6.5A RDS(ON)