NCE15P25JK

Marking：NCE15P25JK；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE15P25JKusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.Itcan beusedinawidevarietyofapplications. GeneralFeatures ●VDS=-150V,ID=-25A RDS(ON)

NCE15P30

Marking：NCE15P30；Package：TO-220-3L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE15P30usesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Itcanbeused inawidevarietyofapplications. GeneralFeatures ●VDS=-150V,ID=-30A RDS(ON)

NCE15P30K

Marking：NCE15P30K；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE15P30Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.Itcan beusedinawidevarietyofapplications. GeneralFeatures ●VDS=-150V,ID=-30A RDS(ON)

NCE160ED120VTP

Marking：NCE160ED120VTP；Package：TO-247P-3L；1200V, 160A, Trench FS Gen.7 IGBT

GeneralDescription UsingNCE'sproprietaryhighdensitytrenchgatedesignandadvancedFS (FieldStop)Gen.7technology,the1200VTrenchFSGen.7IGBTofferssuperior conductionandswitchingperformances,andeasyparalleloperation. Features TrenchFSGen.7TechnologyOffering Lo

NCE160ED120VTP4

Marking：NCE160ED120VTP4；Package：TO-247P-4L；1200V, 160A, Trench FS Gen.7 IGBT

GeneralDescription UsingNCE'sproprietaryhighdensitytrenchgatedesignandadvancedFS (FieldStop)Gen.7technology,the1200VTrenchFSGen.7IGBTofferssuperior conductionandswitchingperformances,andeasyparalleloperation. Features TrenchFSGen.7TechnologyOffering Lo

NCE160ED65VTP

Marking：NCE160ED65VTP；Package：TO-247P-3L；650V, 160A, Trench FS Gen.7 IGBT

GeneralDescription UsingNCE'sproprietaryhighdensitytrenchgatedesignandadvancedFS (FieldStop)Gen.7technology,the650VTrenchFSGen.7IGBTofferssuperior conductionandswitchingperformances,andeasyparalleloperation. Features TrenchfieldstopGen.7TechnologyOfferin

NCE160ED65VTP

Marking：NCE160ED65VTP；Package：TO-247P-4L；650V, 160A, Trench FS Gen.7 IGBT

GeneralDescription UsingNCE'sproprietaryhighdensitytrenchgatedesignandadvancedFS (FieldStop)Gen.7technology,the650VTrenchFSGen.7IGBTofferssuperior conductionandswitchingperformances,andeasyparalleloperation. Features TrenchfieldstopGen.7TechnologyOfferin

NCE16P07J

Marking：NCE16P07J；Package：DFN2X2-6L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE16P07Jusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltages.Thisdeviceissuitableforuseasaloadswitching applicationandawidevarietyofotherapplications. GeneralFeatures ●VDS=-16V,ID=-7A RDS(O

NCE16P40Q

Marking：NCE16P40Q；Package：DFN3.3X3.3-8L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE16P40Qusesadvancedtrenchtechnologytoprovide excellentRDS(ON),Thisdeviceissuitableforuseasaloadswitch orpowermanagement. Application ●Powermanagement ●Loadswitch GeneralFeatures ●VDS=-40V,ID=-15A RDS(ON)

NCE1805S

Marking：NCE1805S；Package：SOP-8；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE1805Susesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=185V,ID=5A RDS(ON)