NCE01P05S

Marking：NCE01P05S；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE01P05Susesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.Itcan beusedinawidevarietyofapplications.ItisESDprotested. GeneralFeatures ●VDS=-100V,ID=-5A RDS(ON)

NCE01P13I

Marking：NCE01P13I；Package：TO-251；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE01P13Iusesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Itcanbe usedinawidevarietyofapplications.ItisESDprotested. GeneralFeatures ●VDS=-100V,ID=-13A RDS(ON)

NCE01P30D

Marking：NCE01P30D；Package：TO-263-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE01P30Dusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.Itcan beusedinawidevarietyofapplications.ItisESDprotested. GeneralFeatures ●VDS=-100V,ID=-30A RDS(ON)

NCE01P30I

Marking：NCE01P30I；Package：TO-251；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE01P30Iusesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Itcanbe usedinawidevarietyofapplications.ItisESDprotested. GeneralFeatures ●VDS=-100V,ID=-30A RDS(ON)

NCE01P35K

Marking：NCE01P35K；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE01P35Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.Itcan beusedinawidevarietyofapplications. GeneralFeatures ●VDS=-100V,ID=-35A RDS(ON)

NCE0208KA

Marking：NCE0208KA；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE0208KAusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=200V,ID=8A RDS(ON)

NCE020N30K

Marking：NCE020N30K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE020N30Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=30V,ID=180A RDS(ON)=1.9mΩ@VGS=10V(Typ) RDS(ON)=2.6mΩ@VGS=4.5V(Typ) ●Highdensity

NCE0224

Marking：NCE0224；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE0224usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=200V,ID=24A RDS(ON)

NCE0224A

Marking：NCE0224A；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE0224Ausesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=200V,ID=24A RDS(ON)

NCE0224AF

Marking：NCE0224AF；Package：TO-220F；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE0224AFusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=200V,ID=24A RDS(ON)