NCE0125AK

Marking：NCE0125AK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE0125AKusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=100V,ID=25A RDS(ON)

NCE0130A

Marking：NCE0130A；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE0130Ausesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=100V,ID=30A RDS(ON)

NCE0130GA

Marking：NCE0130GA；Package：DFN5X6-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE0130GAusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. Application ●Powerswitchingapplication ●Hardswitchedandhighfrequencycircuits ●Uninterruptiblepowersupply

NCE0140AK2

Marking：NCE0140AK2；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE0140AK2usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=100V,ID=40A RDS(ON)

NCE0140I2

Marking：NCE0140I2；Package：TO-251；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE0140I2usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=100V,ID=40A RDS(ON)

NCE0157A2D

Marking：NCE0157A2D；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE0157A2Dusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=100V,ID=57A RDS(ON)

NCE0157AK

Marking：NCE0157AK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE0157AKusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=100V,ID=57A RDS(ON)

NCE0157G

Marking：NCE0157G；Package：DFN5X6-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE0157Gusesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Itcanbe usedinawidevarietyofapplications.Application ●DC/DCConverter ●Idealforhigh-frequencyswitchingandsynchronous rectificati

NCE01H10D

Marking：NCE01H10D；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE01H10Dusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=100V,ID=100A RDS(ON)

NCE01NP03S

Marking：NCE01NP03S；Package：SOP-8；NCE N-Channel and P-Channel Enhancement Mode Power MOSFET

Description TheNCE01NP03Susesadvancedtrenchtechnologytoprovide excellentRDS(ON)andlowgatecharge.Thisdeviceissuitablefor useininverterandotherapplications. GeneraFeatures N-channelP-channel ●VDS=100V,ID=3A●VDS=-100V,ID=-3A RDS(ON)