NCE01H10D丝印代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NCE01H10D	文件：654.54 Kbytes Page：7 Pages	丝印：NCE01H10D；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID =100A RDS(ON) 文件：654.54 Kbytes 页数：7 Pages	NCEPOWER 新洁能	NCEPOWER
LCE01H10D	文件：867.8 Kbytes Page：6 Pages	丝印：NCE01H10D；Package：TO-263-2L；N-Channel Enhancement Mode Power MOSFET 文件：867.8 Kbytes 页数：6 Pages	LEIDITECH 雷卯电子	LEIDITECH
LMPC100N10	文件：881.76 Kbytes Page：6 Pages	丝印：NCE01H10D；Package：TO-263-2L；N-Channel Enhancement Mode Power MOSFET 文件：881.76 Kbytes 页数：6 Pages	LEIDITECH 雷卯电子	LEIDITECH
NCE01H10D	文件：654.54 Kbytes Page：7 Pages	丝印：NCE01H10D；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID =100A RDS(ON) 文件：654.54 Kbytes 页数：7 Pages	NCEPOWER 新洁能	NCEPOWER

更多NCE01H10D供应商更新时间2022-6-12 10:12:00