丝印：NCE01H10D；Package：TO-263-2L；N-Channel Enhancement Mode Power MOSFET

文件：881.76 Kbytes 页数：6 Pages

LEIDITECH

雷卯电子

TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM

TMOS E-FET™ Power Field Effect transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for h

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MOTOROLA

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=100A@ TC=25℃ ·Drain Source Voltage : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =11mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：324.09 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：212.64 Kbytes 页数：7 Pages

ONSEMI

安森美半导体