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MTY100N10E中文资料摩托罗拉数据手册PDF规格书
MTY100N10E规格书详情
TMOS E-FET™ Power Field Effect transistor
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
产品属性
- 型号:
MTY100N10E
- 功能描述:
MOSFET N-CH 100V 100A TO-264
- RoHS:
否
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
-
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
NA/ |
17138 |
原装现货,当天可交货,原型号开票 |
询价 | ||
ON |
17+ |
TO-264 |
600 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ON |
NEW |
TO-264 |
6893 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
询价 | ||
ON Semiconductor |
22+ |
TO2643 TO264AA |
9000 |
原厂渠道,现货配单 |
询价 | ||
ON进口原装 |
25+23+ |
TO-3P |
55314 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | ||
MOTOROLA |
25+ |
管3PL |
18000 |
原厂直接发货进口原装 |
询价 | ||
ON/安森美 |
25+ |
NA |
860000 |
明嘉莱只做原装正品现货 |
询价 | ||
ON |
24+ |
TP-220 |
260 |
询价 | |||
ON进口原装 |
2023+ |
TO-3P |
8635 |
全新原装正品,优势价格 |
询价 | ||
MOTOROLA |
2025+ |
TO-3PL |
3685 |
全新原厂原装产品、公司现货销售 |
询价 |


