NCE042N30K

Marking：NCE042N30K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE042N30Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=30V,ID=100A RDS(ON)=3.2mΩ@VGS=10V RDS(ON)=6.8mΩ@VGS=4.5V ●Highdensitycelldesignf

NCE048N30Q

Marking：NCE048N30Q；Package：PDFN3.3X3.3-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE048N30Qusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. Application ●Powerswitchingapplication ●HardSwitchedandHighFrequencyCircuits ●UninterruptiblePowerSupply

NCE100ED65VT

Marking：NCE100ED65VT；Package：TO-247-3L；650V 100A Trench FS Gen.7 IGBT

GeneralDescription UsingNCE'sproprietaryhighdensitytrenchgatedesignandadvancedFS (FieldStop)Gen.7technology,the650VTrenchFSGen.7IGBTofferssuperior conductionandswitchingperformances,andeasyparalleloperation. Features TrenchfieldstopGen.7TechnologyOfferin

NCE100ED65VT4

Marking：NCE100ED65VT4；Package：TO-247-4L；650V 100A Trench FS Gen.7 IGBT

GeneralDescription UsingNCE'sproprietaryhighdensitytrenchgatedesignandadvancedFS (FieldStop)Gen.7technology,the650VTrenchFSGen.7IGBTofferssuperior conductionandswitchingperformances,andeasyparalleloperation. Features TrenchfieldstopGen.7TechnologyOfferin

NCE100ED65VTP

Marking：NCE100ED65VTP；Package：TO-247P-3L；650V 100A Trench FS Gen.7 IGBT

GeneralDescription UsingNCE'sproprietaryhighdensitytrenchgatedesignandadvancedFS (FieldStop)Gen.7technology,the650VTrenchFSGen.7IGBTofferssuperior conductionandswitchingperformances,andeasyparalleloperation. Features TrenchfieldstopGen.7TechnologyOfferin

NCE100ED65VTP4

Marking：NCE100ED65VTP4；Package：TO-247P-4L；650V 100A Trench FS Gen.7 IGBT

GeneralDescription UsingNCE'sproprietaryhighdensitytrenchgatedesignandadvancedFS (FieldStop)Gen.7technology,the650VTrenchFSGen.7IGBTofferssuperior conductionandswitchingperformances,andeasyparalleloperation. Features TrenchfieldstopGen.7TechnologyOfferin

NCE100TD120BTP

Marking：NCE100TD120BTP；Package：TO-247P；1200V, 100A, Trench FS II Fast IGBT

GeneralDescription UsingNCE'sproprietarytrenchdesignandadvancedFS(FieldStop)second generationtechnology,the1200VTrenchFSIIIGBTofferssuperiorconductionand switchingperformances,andeasyparalleloperation; Features TrenchFSIITechnologyOffering VerylowVCE(sat)

NCE100TD120VTP

Marking：NCE100TD120VTP；Package：TO-247P；1200V, 100A, Trench FS II Fast IGBT

GeneralDescription UsingNCE'sproprietarytrenchdesignandadvancedFS(FieldStop)second generationtechnology,the1200VTrenchFSIIIGBTofferssuperiorconductionand switchingperformances,andeasyparalleloperation; Features TrenchFSIITechnologyOffering VerylowVCE(sat)

NCE100TD120VTP4

Marking：NCE100TD120VTP4；Package：TO-247P-4L；1200V, 100A, Trench FS II Fast IGBT

GeneralDescription UsingNCE'sproprietarytrenchdesignandadvancedFS(FieldStop)second generationtechnology,the1200VTrenchFSIIIGBTofferssuperiorconductionand switchingperformances,andeasyparalleloperation; Features TrenchFSIITechnologyOffering VerylowVCE(sat)

NCE120ED120VTP

Marking：NCE120ED120VTP；Package：TO-247P-3L；1200V, 120A, Trench FS Gen.7 IGBT

GeneralDescription UsingNCE'sproprietaryhighdensitytrenchgatedesignandadvancedFS (FieldStop)Gen.7technology,the1200VTrenchFieldStopGen.7IGBToffers superiorconductionandswitchingperformances,andeasyparalleloperation; Features TrenchFieldStopGen.7Technology