NCE3080IA

Marking：NCE3080IA；Package：TO-251；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3080IAusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=30V,ID=80A RDS(ON)

NCE3085K

Marking：NCE3085K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3085Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=30V,ID=85A RDS(ON)=4.2mΩ@VGS=10V(Typ) RDS(ON)=7.0mΩ@VGS=4.5V(Typ) ●Highdensitycel

NCE3090K

Marking：NCE3090K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3090Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=30V,ID=90A RDS(ON)=3.4mΩ(typical)@VGS=10V RDS(ON)=6.9mΩ(typical)@VGS=4.5V ●Highdensity

NCE3095G

Marking：NCE3095G；Package：DFN5x6-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3095Gusesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Itcanbe usedinawidevarietyofapplications. Application ●DC/DCConverter ●Idealforhigh-frequencyswitchingandsynchronous rectification

NCE3095K

Marking：NCE3095K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE3095Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=30V,ID=95A RDS(ON)

NCE30H10BG

Marking：NCE30H10BG；Package：DFN5X6-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE30H10BGusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.Itcan beusedinawidevarietyofapplications. Application ●Powerswitchingapplication ●Hardswitchedandhighfrequencycircuits ●Uninterruptiblepowersuppl

NCE30H10BK

Marking：NCE30H10BK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE30H10BKusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=30V,ID=100A RDS(ON)

NCE30H11BG

Marking：NCE30H11BG；Package：DFN5X6-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE30H11BGusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.Itcan beusedinawidevarietyofapplications.GeneralFeatures ●VDS=30V,ID=110A RDS(ON)=2.3mΩ(typical)@VGS=10V RDS(ON)=3.8mΩ(typical)@VGS=4.5V ●Excellentga

NCE30H11BK

Marking：NCE30H11BK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE30H11BKusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=30V,ID=110A RDS(ON)=2.7mΩ(typical)@VGS=10V RDS(ON)=3.9mΩ(typical)@VGS=4.5V ●Highdensi

NCE30H11K

Marking：NCE30H11K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE30H11Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=30V,ID=110A RDS(ON)