NCE40P20Q1

Marking：NCE40P20Q1；Package：DFN3.3X3.3-8L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE40P20Q1usesadvancedtrenchtechnologytoprovide excellentRDS(ON),Thisdeviceissuitableforuseasaloadswitch orpowermanagement.Application ●Powermanagement ●Loadswitch GeneralFeatures ●VDS=-40V,ID=-20A RDS(ON)

NCE40P25G

Marking：NCE40P25G；Package：DFN5x6-8L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE40P25Gusesusesadvancedtrenchtechnologyto provideexcellentRDS(ON),Thisdeviceissuitableforuseasaload switchorpowermanagement. Application ●DC/DCConverter ●Idealforhigh-frequencyswitchingandsynchronous rectification GeneralFeatures ●VDS=-40V

NCE40P30K

Marking：NCE40P30K；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE40P30Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceiswellsuitedforhighcurrentloadapplications.GeneralFeatures ●VDS=-40V,ID=-30A RDS(ON)

NCE40P40D

Marking：NCE40P40D；Package：TO-263-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE40P40Dusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceiswellsuitedforhighcurrentloadapplications. GeneralFeatures ●VDS=-40V,ID=-40A RDS(ON)

NCE4435B

Marking：NCE4435B；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE4435Busesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas4.5V.Thisdeviceissuitableforuseasa loadswitchorinPWMapplications. GeneralFeatures ●VDS=-30V,ID=-12A RDS(ON)

NCE4435X

Marking：NCE4435X；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE4435Xusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas4.5V.Thisdeviceissuitableforuseasa loadswitchorinPWMapplications. GeneralFeatures ●VDS=-30V,ID=-10A RDS(ON)

NCE4528K

Marking：NCE4528K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE4528Kusesadvancedtrenchtechnologytoprovide excellentRDS(ON)andlowgatecharge.Thecomplementary MOSFETsmaybeusedtoformalevelshiftedhighside switch,andforahostofotherapplications. GeneralFeatures ●N-Channel VDS=45V,ID=28A RDS(ON)

NCE4555K

Marking：NCE4555K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE4555Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=45V,ID=55A RDS(ON)=9.2mΩ@VGS=10V(Typ) RDS(ON)=13mΩ@VGS=4.5V(Typ) ●Highdensitycell

NCE4558K

Marking：NCE4558K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE4558Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=45V,ID=58A RDS(ON)

NCE4606B

Marking：NCE4606B；Package：SOP-8；N and P-Channel Enhancement Mode Power MOSFET

Description TheNCE4606Busesadvancedtrenchtechnologytoprovide excellentRDS(ON)andlowgatecharge.Thecomplementary MOSFETsmaybeusedtoformalevelshiftedhighside switch,andforahostofotherapplications. GeneralFeatures ●N-Channel VDS=30V,ID=6A RDS(ON)