丝印：NCE4435X；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE4435X uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -10A RDS(ON)

文件：277.4 Kbytes 页数：7 Pages

NCEPOWER

新洁能

P-Channel E nhancement Mode MOSFET

P-Channel Enhancement Mode MOSFET FEATURES Surface Mount Package. Super high dense cell design for low RDS(ON). Rugged and reliable.

文件：550.78 Kbytes 页数：7 Pages

SAMHOP

三合微科

30V P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features • –8.8 A, –30 V RDS(ON) = 20 mΩ @ VGS

文件：93.27 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

P-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package.

文件：745.67 Kbytes 页数：8 Pages

SAMHOP

三合微科