丝印：NCE6010J；Package：DFN2X2-6L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6010J uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =10A RDS(ON)

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NCEPOWER

新洁能

12-200V N-Channel Trench MOSFET

NCEPower

新洁能

Fast Recovery Rectifier, 40A, 200ns

Description: The NTE6006 through NTE6011 are fast recovery silicon rectifiers in a DO5 type package designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference, sonar power supplies, and free wheeling diodes. A complete lin

文件：20.66 Kbytes 页数：2 Pages

NTE

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

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TECCOR

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

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TECCOR