CIT SWITCH

文件：252.92 Kbytes 页数：3 Pages

CIT

丝印：NCE5015S；Package：SOP-8；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE5015S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =12A RDS(ON)

文件：405.44 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE5020Q；Package：DFN3.3X3.3-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE5020Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =50V,ID =20A RDS(ON)

文件：277.19 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE5055K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE5055K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =50V,ID =55A RDS(ON)

文件：443.49 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE5080K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE5080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =50V,ID =80A RDS(ON)

文件：449.74 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：TO-247-3L；Package：NCE50ED65VT；650V 50A Trench FS Gen.7 IGBT

General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench Field Stop Gen.7 Technology Offering

文件：1.19957 Mbytes 页数：9 Pages

NCEPOWER

新洁能

丝印：TO-3P；Package：NCE50TD120BP；1200V, 50A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)

文件：1.42089 Mbytes 页数：8 Pages

NCEPOWER

新洁能

丝印：TO-247；Package：NCE50TD120BT；1200V, 50A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)

文件：1.49633 Mbytes 页数：9 Pages

NCEPOWER

新洁能

丝印：TO-247P；Package：NCE50TD120VTP；1200V, 50A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)

文件：1.56884 Mbytes 页数：10 Pages

NCEPOWER

新洁能

丝印：TO-247；Package：NCE50TD120WT；1200V, 50A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)

文件：1.47787 Mbytes 页数：8 Pages

NCEPOWER

新洁能