丝印：NCE5080K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE5080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =50V,ID =80A RDS(ON)

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NCEPOWER

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12-200V N-Channel Trench MOSFET

\n The NCE5080K uses advanced trench technology and design  to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. \n• V DS =50V,I D =80A\nR DS(ON) <7.5m? @ V GS =10V\nR DS(ON) <9m? @ V GS =4.5V\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Good stability and uniformity with high E AS\n• Excellent package for good heat dissipation\n• Special process techn;

NCEPower

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Xenon Photoflash Capacitor Charge with Photo Sense Interface

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ONSEMI

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Xenon Photoflash Capacitor Charge with Photo Sense Interface

文件：439.63 Kbytes 页数：12 Pages

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High-speed FSK modem transmitter

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PHI

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