丝印：NCE4558K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE4558K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =45V,ID =58A RDS(ON)

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NCEPOWER

新洁能

12-200V N-Channel Trench MOSFET

\n The NCE4558K uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. \n• V DS =45V,I D =58A\nR DS(ON) <12m? @ V GS =10V\nR DS(ON) <18m? @ V GS =4.5V\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Good stability and uniformity with high E AS\n• Excellent package for good heat dissipation\n• Special process techn;

NCEPower

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DUAL OPERATIONAL AMPLIFIER?

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NJRC

日本无线

DUAL OPERATIONAL AMPLIFIER?

文件：56.4 Kbytes 页数：2 Pages

NJRC

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HIGH PERFORMANCE DUAL OPERATIONAL AMPLIFIER???

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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NEC

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