丝印：NCE4558K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE4558K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =45V,ID =58A RDS(ON)

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NCEPOWER

新洁能

12-200V N-Channel Trench MOSFET

\n The NCE4558K uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. \n• V DS =45V,I D =58A\nR DS(ON) <12m? @ V GS =10V\nR DS(ON) <18m? @ V GS =4.5V\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Good stability and uniformity with high E AS\n• Excellent package for good heat dissipation\n• Special process techn;

NCEPower

新洁能

Dual general-purpose operational amplifier

DESCRIPTION The 4558 is a dual operational amplifier that is internally compensated. Excellent channel separation allows the use of a dual device in a single amp application, providing the highest packaging density. The NE/SA/SE4558 is a pin-for-pin replacement for the RC/RM/RV4558. FEATURE

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PHI

飞利浦

Dual general-purpose operational amplifier

DESCRIPTION The 4558 is a dual operational amplifier that is internally compensated. Excellent channel separation allows the use of a dual device in a single amp application, providing the highest packaging density. The NE/SA/SE4558 is a pin-for-pin replacement for the RC/RM/RV4558. FEATURE

文件：85.38 Kbytes 页数：5 Pages

PHI

飞利浦

Dual general-purpose operational amplifier

DESCRIPTION The 4558 is a dual operational amplifier that is internally compensated. Excellent channel separation allows the use of a dual device in a single amp application, providing the highest packaging density. The NE/SA/SE4558 is a pin-for-pin replacement for the RC/RM/RV4558. FEATURE

文件：85.38 Kbytes 页数：5 Pages

PHI

飞利浦