CIT SWITCH

文件：252.92 Kbytes 页数：3 Pages

CIT

丝印：6003X；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)

文件：639.44 Kbytes 页数：7 Pages

NCEPOWER

新洁能

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Battery Switch • DC/DC Converter

文件：503.01 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

丝印：6003M；Package：SOT-89-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature ● VDS =60V,ID =3.0A RDS(ON)

文件：257.26 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：6003X；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003X uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)

文件：642.2 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：6003XM；Package：SOT-89-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003XM uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)

文件：675.83 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：6003XY；Package：SOT-23-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003XY uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)

文件：711.16 Kbytes 页数：7 Pages

NCEPOWER

新洁能

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Battery Switch • DC/DC Converter

文件：503.1 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6004 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =4A RDS(ON)

文件：772.61 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：6005AN；Package：SOT23-6L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6005AN uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS=60V,ID=5A RDS(ON)

文件：711.65 Kbytes 页数：8 Pages

NCEPOWER

新洁能