型号：NCE6003XM；Package：SOT-89-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003XM uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)

文件：675.83 Kbytes 页数：7 Pages

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司