丝印：NCE6080EK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6080EK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)

文件：599.58 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE609；Package：TO-252-4L；N and P-Channel Enhancement Mode Power MOSFET

Description The NCE609 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS =40V,ID =21A RDS(ON)

文件：496.78 Kbytes 页数：10 Pages

NCEPOWER

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丝印：NCE60H10D；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE60H10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =60V,ID =100A RDS(ON)

文件：611.83 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE60H10K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE60H10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =60V,ID =100A RDS(ON)

文件：622.2 Kbytes 页数：7 Pages

NCEPOWER

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 150A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.1mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.36 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：NCE60H15A；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE60H15A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =150A RDS(ON)

文件：583.74 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE60H15AD；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE60H15AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =150A RDS(ON)

文件：568.42 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE60H15AT；Package：TO-247；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE60H15AT uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =150A RDS(ON)

文件：662.38 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE60H15T；Package：TO-247；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE60H15T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =150A RDS(ON)

文件：615.44 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE60H18；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE60H18 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =60V,ID =180A RDS(ON)

文件：642.57 Kbytes 页数：7 Pages

NCEPOWER

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