P-Channel 60-V (D-S) MOSFET

FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available

文件：1.11335 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

丝印：60P05BY；Package：SOT-23-3L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P05BY uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-5A RDS(ON)

文件：381.35 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：LNCE60P05N；Package：SOT-23-6L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P05N uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-5A RDS(ON)

文件：416.25 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE60P05R；Package：SOT-223-3L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P05R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-5A RDS(ON)

文件：496.98 Kbytes 页数：8 Pages

NCEPOWER

新洁能

丝印：NCE60P06S；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-60V,ID =-6A RDS(ON)

文件：318.44 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE60P07AS；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P07AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-7A RDS(ON)

文件：376.62 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE60P08AS；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P08AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-60V,ID =-8A RDS(ON)

文件：414.65 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE60P09AS；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-60V,ID =-9A RDS(ON)

文件：293.15 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE60P09K；Package：TO-252；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P09K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Application ● Load switch ● PWM application General Features ● VDS =-60V,ID =-9A RDS(ON)

文件：659.59 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE60P09S；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P09S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-60V,ID =-9A RDS(ON)

文件：290.33 Kbytes 页数：7 Pages

NCEPOWER

新洁能