型号：NCE60P05BY；Package：SOT-23-3L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P05BY uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-5A RDS(ON)

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NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

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