丝印：60R042D1；Package：PG-DSO-20-85；600V CoolGaN™ enhancement-mode Power Transistor

Features • Enhancement mode transistor – Normally OFF switch • Ultra fast switching • No reverse-recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD

文件：573.53 Kbytes 页数：16 Pages

Infineon

英飞凌

丝印：60R042D1；Package：PG-DSO-20-87；600V CoolGaN™ enhancement-mode Power Transistor

Features • Enhancement mode transistor – Normally OFF switch • Ultra fast switching • No reverse-recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD

文件：638.14 Kbytes 页数：16 Pages

Infineon

英飞凌

丝印：60R042D1；Package：PG-HSOF-8-3；600V CoolGaN™ enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD

文件：553.39 Kbytes 页数：16 Pages

Infineon

英飞凌