丝印：60R042D1；Package：PG-DSO-20-85；600V CoolGaN™ enhancement-mode Power Transistor

Features • Enhancement mode transistor – Normally OFF switch • Ultra fast switching • No reverse-recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD

文件：573.53 Kbytes 页数：16 Pages

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英飞凌

600 V CoolGaN ™ e-mode 功率晶体管，适用于底部冷却功率封装中的高功率应用

600 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability • E-mode HEMT – normally OFF\n• Ultrafast switching\n• No reverse-recovery charge\n• Capable of reverse conduction\n• Low gate charge, low output charge\n• Superior commutation ruggedness\n• JEDEC qualified (JESD47, JESD22)\n• Low dynamic RDS(on)\n• Bottom-side cooled\n\n优势:\n• Improves system effic;

Infineon

英飞凌

600V CoolGaN™ enhancement-mode Power Transistor

Features • Enhancement mode transistor – Normally OFF switch • Ultra fast switching • No reverse-recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD

文件：638.14 Kbytes 页数：16 Pages

Infineon

英飞凌

600V CoolGaN™ enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD

文件：553.39 Kbytes 页数：16 Pages

Infineon

英飞凌