IGO60R042D1

丝印：60R042D1；Package：PG-DSO-20-85；600V CoolGaN™ enhancement-mode Power Transistor

Features •Enhancementmodetransistor–NormallyOFFswitch •Ultrafastswitching •Noreverse-recoverycharge •Capableofreverseconduction •Lowgatecharge,lowoutputcharge •Superiorcommutationruggedness •QualifiedforindustrialapplicationsaccordingtoJEDEC Standards(JESD

IGO60R042D1

GaN transistors (GaN HEMTs); • E-mode HEMT – normally OFF\n• Ultrafast switching\n• No reverse-recovery charge\n• Capable of reverse conduction\n• Low gate charge, low output charge\n• Superior commutation ruggedness\n• JEDEC qualified (JESD47, JESD22)\n• Low dynamic RDS(on)\n• Bottom-side cooled\n\n优势:\n• Improves system efficiency\n• Improves power density\n• Enables higher operating frequency\n• System cost reduction savings\n• Reduces EMI\n;

600 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability\n

IGOT60R042D1

600VCoolGaN™enhancement-modePowerTransistor

Features •Enhancementmodetransistor–NormallyOFFswitch •Ultrafastswitching •Noreverse-recoverycharge •Capableofreverseconduction •Lowgatecharge,lowoutputcharge •Superiorcommutationruggedness •QualifiedforindustrialapplicationsaccordingtoJEDEC Standards(JESD

IGT60R042D1

600VCoolGaN™enhancement-modePowerTransistor

Features Enhancementmodetransistor–NormallyOFFswitch Ultrafastswitching Noreverse-recoverycharge Capableofreverseconduction Lowgatecharge,lowoutputcharge Superiorcommutationruggedness QualifiedforindustrialapplicationsaccordingtoJEDEC Standards(JESD

IGW100N60H3

Infineon
TO-247-3