IGO60R042D1中文资料英飞凌数据手册PDF规格书

厂商型号	IGO60R042D1
功能描述	600V CoolGaN™ enhancement-mode Power Transistor
丝印标识	60R042D1
封装外壳	PG-DSO-20-85
文件大小	573.53 Kbytes
页面数量	16 页
生产厂商	Infineon Technologies AG
企业简称	INFINEON【英飞凌】
中文名称	英飞凌科技股份公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-8-1 8:14:00
人工找货	IGO60R042D1价格和库存，欢迎联系客服免费人工找货

特性 Features

• Enhancement mode transistor – Normally OFF switch

• Ultra fast switching

• No reverse-recovery charge

• Capable of reverse conduction

• Low gate charge, low output charge

• Superior commutation ruggedness

• Qualified for industrial applications according to JEDEC

Standards (JESD47 and JESD22)

Benefits

• Improves system efficiency

• Improves power density

• Enables higher operating frequency

• System cost reduction savings

• Reduces EMI

Applications

Industrial, telecom, datacenter SMPS based on the half-bridge topology

(half-bridge topologies for hard and soft switching such as Totem pole PFC,

high frequency LLC).

For other applications: review CoolGaN™ reliability white paper and contact

Infineon regional support