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IGO60R042D1中文资料GaN transistors (GaN HEMTs)数据手册Infineon规格书
IGO60R042D1规格书详情
描述 Description
600 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability
特性 Features
• E-mode HEMT – normally OFF
• Ultrafast switching
• No reverse-recovery charge
• Capable of reverse conduction
• Low gate charge, low output charge
• Superior commutation ruggedness
• JEDEC qualified (JESD47, JESD22)
• Low dynamic RDS(on)
• Bottom-side cooled
优势:
• Improves system efficiency
• Improves power density
• Enables higher operating frequency
• System cost reduction savings
• Reduces EMI
应用 Application
• Industrial
• Telecom
• Datacenter SMPS based on the half-bridge topology
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
10 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
Infineon(英飞凌) |
24+ |
SOP20 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
Infineon/英飞凌 |
21+ |
PG-DSO-20 |
6820 |
只做原装,质量保证 |
询价 | ||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
询价 | ||
Infineon Technologies |
21+ |
PG-DSO-20-85 |
800 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
询价 | ||
INFINEON |
24+ |
n/a |
25836 |
新到现货,只做原装进口 |
询价 | ||
Infineon/英飞凌 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源! |
询价 | ||
Infineon |
24+ |
PG-DSO-20 |
9000 |
只做原装正品 有挂有货 假一赔十 |
询价 | ||
Infineon/英飞凌 |
23+ |
PG-DSO-20 |
12700 |
买原装认准中赛美 |
询价 | ||
Infineon/英飞凌 |
23+ |
PG-DSO-20 |
6000 |
我们只做原装正品,支持检测。 |
询价 |