IGLR65R200D2中文资料CoolGaN™ Transistor 650 V G5数据手册Infineon规格书

特性 Features

• 650 V e-mode power transistor
• Ultrafast switching
• No reverse-recovery charge
• Capable of reverse conduction
• Low gate charge, low output charge
• Superior commutation ruggedness
• Low dynamic RDS(on)
• High ESD robustness: 2 kV HBM - 1 kV CDM
• Bottom-side cooled package
• JEDEC qualified (JESD47, JESD22)

优势:
• Supports high operating frequency
• Enables highest system efficiency
• Enables ultrahigh power density designs
• Supports BOM cost savings