IGI60F2020A1L数据手册Infineon中文资料规格书

描述 Description

IGI60F2020A1L combines a half-bridge power stage consisting of two 200 mΩ (typ. RDS(on)) / 600 V enhancement mode CoolGaN™ HEMT with dedicated gate drivers in a small 8 x 8 mm QFN-28 package.
It is thus ideally suited to support the design of high density AC-DC charger and adapters utilizing the superior switching behavior of CoolGaN™ power switches. Infineon’s CoolGaN™ and related power switches provide a very robust gate structure. When driven by a continuous gate current of a few mA in the “on” state, a minimum on-resistance RDS(on) is always guaranteed, independent of temperature and parameter variations.
The driver utilizes on-chip coreless transformer technology (CT) to achieve signal level-shifting to the high-side. Further, CT guarantees robustness even for extremely fast switching transients above 300 V/ns.

特性 Features

• Isolated digital input with digital-in, power-out building block
• Application configurable switching behavior
• Fast, highly accurate, and stable timing
• Thermally enhanced 8x8mm QFN-28

优势:
• Easy to drive with 2x digital PWM input
• Low system BOM
• Complete configurability of gate path via simple RC interface
• Allows short dead-time setting to maximize system efficiency 
• Small package for compact system designs

应用 Application

• USB-PD
• Charger and adapters
• Server, telecom & networking SMPS
• Low power motor drive
• LED lighting