IGI60F1414A1L中文资料600V CoolGaN ™集成功率级 (IPS) 提供高密度、高效率解决方案数据手册Infineon规格书

描述 Description

IGI60F1414A1L combines a half-bridge power stage consisting of two 140 mΩ (typ. RDS(on)) / 600V enhancement mode CoolGaN™ HEMT with dedicated gate drivers in a small 8x8 mm QFN-28 package.
It is thus ideally suited to support the design of high density AC-DC charger and adapters utilizing the superior switching behavior of CoolGaN™ power switches. Infineon’s CoolGaN™ and related power switches provide a very robust gate structure. When driven by a continuous gate current of a few mA in the “on” state, a minimum on-resistance RDS(on) is always guaranteed, independent of temperature and parameter variations.
The driver utilizes on-chip coreless transformer technology (CT) to achieve signal level-shifting to the high-side. Further, CT guarantees robustness even for extremely fast switching transients above 300V/ns.

特性 Features

• Isolated digital input with digital-in, power-out building block
• Application configurable switching behavior
• Fast, highly accurate, and stable timing
• Thermally enhanced 8x8mm QFN-28

优势:
• Easy to drive with 2x digital PWM input
• Low system BOM
• Complete configurability of gate path via simple RC interface
• Allows short dead-time setting to maximize system efficiency 
• Small package for compact system designs

应用 Application

• USB-PD
• Charger and adapters
• Server, telecom & networking SMPS
• Low power motor drive
• LED lighting

简介

IGI60F1414A1L属于集成电路（IC）的全半桥驱动器。由制造生产的IGI60F1414A1L全半桥驱动器器件属于电桥驱动器电源管理集成电路 (PMIC) 系列，包含两个或多个功率晶体管，以及在外部器件控制下将其用作开关所需的电路。这些晶体管通常在内部配置为成对串联连接（称为半桥），因而任意指定晶体管对之间的结点都可以连接至两个电源轨中的任一个。这类器件常用于将控制器件（如微控制器）提供的低电平信号转换为操作执行器（如步进电机或无刷电机）所需的较大功率信号。