IGLD60R190D1S中文资料GaN transistors (GaN HEMTs)数据手册Infineon规格书

描述 Description

600 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability

特性 Features

• E-mode HEMT – normally OFF
• Ultra fast switching
• No reverse-recovery charge
• Capable of reverse conduction
• Low gate charge, low output charge
• Superior commutation ruggedness
• Consumer-grade qualification
• Bottom-side cooled

优势:
• Improves system efficiency
• Improves power density
• Enables higher operating frequency
• System cost reduction savings
• Reduces EMI

应用 Application

• Low power SMPS
• Charger/adapters
• Consumer SMPS based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC).