IGI60L1414B1M数据手册Infineon中文资料规格书

描述 Description

IGI60L1414B1M combines a half-bridge power stage consisting of two CoolGaN™ Transistors 600 V / 140 mΩ (RDS(on) typ.) with an integrated level-shift gate driver and a bootstrap diode in a small 6x8 mm TFLGA-27 package.

特性 Features

• Integrated level shift gate driver
• Integrated bootstrap diode
• PWM input compatible
• Wide VDD range (10 to 24 V)
• Turn-ON & OFF dv/dt slew rate control
• Zero Qrr

优势:
       Compared to a discrete solution:

• 4x reduction in components count
• 2x reduction of footprint on a PCBOn a system level:
• Reduced cost
• Reduced weight
• Reduced complexity