丝印：65R200D；Package：PG-TSON-8；CoolGaN™ Gen2 650 V CoolGaN™ enhancement‑mode Power Transistor

Features • Enhancement mode transistor ‑ Normally OFF switch • Ultra fast switching • No reverse‑recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • ESD (HBM/CDM) JEDEC standards Benefits • Improves system efficiency

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CoolGaN ™晶体管 650 V G5

• 650 V e-mode power transistor\n• Ultrafast switching\n• No reverse-recovery charge\n• Capable of reverse conduction\n• Low gate charge, low output charge\n• Superior commutation ruggedness\n• Low dynamic RDS(on)\n• High ESD robustness: 2 kV HBM - 1 kV CDM\n• Bottom-side cooled package\n• JEDEC qua;

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TO-247-3

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上传：深圳市智创诚芯电子科技有限公司

TO-247-3

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上传：深圳市金嘉锐电子有限公司