丝印：60R055F7；Package：PG-HDSOP-22；MOSFET 600V CoolMOSª CFD7 Power Transistor

Features • Ultra-fast body diode • Low gate charge • Best-in-class reverse recovery charge (Qrr) • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • Best-in-class RDS(on) in SMD and THD packages Benefits • Excellent hard commutation rugg

文件：1.22532 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：60R055F7；Package：PG-TO247-3；600V CoolMOSª CFD7 Power Transistor

Features • Ultra-fast body diode • Low gate charge • Best-in-class reverse recovery charge (Qrr) • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • Best-in-class RDS(on) in SMD and THD packages

文件：1.17309 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：60R055F7；Package：PG-TO263-3；600V CoolMOS짧 CFD7 Power Transistor

文件：1.25762 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：60R055F7；Package：PG-HDSOP-10；600V CoolMOS??CFD7 Power Transistor

文件：1.0726 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：60R055F7；Package：PG-HSOF-8；600V CoolMOS짧 CFD7 Power Transistor

文件：1.3015 Mbytes 页数：14 Pages

Infineon

英飞凌