IPT60R055CFD7

丝印：60R055F7；Package：PG-HSOF-8；600V CoolMOS짧 CFD7 Power Transistor

IPT60R055CFD7

600V CoolMOS™ N-Channel Power MOSFET; \n优势:\n• Best-in-class hard commutation ruggedness\n• Highest reliability for resonant topologies\n• Highest efficiency with outstanding ease-of-use/performance trade-off\n• Enabling increased power density solutions\n;

IPB60R055CFD7

600VCoolMOS짧CFD7PowerTransistor

IPDD60R055CFD7

600VCoolMOS??CFD7PowerTransistor

IPDQ60R055CFD7

MOSFET600VCoolMOSªCFD7PowerTransistor

Features •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Best-in-classRDS(on)inSMDandTHDpackages Benefits •Excellenthardcommutationrugg

IPW60R055CFD7

600VCoolMOSªCFD7PowerTransistor

Features •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Best-in-classRDS(on)inSMDandTHDpackages