The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies

\n优势:\n• Excellent hard-commutation ruggedness\n• Extra safety margin for designs with increased bus voltage\n• Enabling increased power density\n• Outstanding light-load efficiency in industrial SMPS applications\n• Improved full-load efficiency in industrial SMPS applications\n• Price competitiven;

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英飞凌

丝印：65R080F7；Package：PG-HSOF-8；650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS(on) dependency over temperature Benefits • Excellent hard commutation ruggedness • Extra safety margin for designs with increased bus voltage • Enabling increased powe

文件：1.4202 Mbytes 页数：14 Pages

Infineon

英飞凌

Package：8-PowerSFN；包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：HIGH POWER_NEW

Infineon

英飞凌

MOSFET 650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS(on) dependency over temperature

文件：1.25216 Mbytes 页数：14 Pages

Infineon

英飞凌

MOSFET 650V CoolMOSª CFD7A SJ Power Device

Features • Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Qrr • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • 100% avalanche tested • Best-in-class RDS(on) in SMD and THD packages Benefits • Lower switching losses enabling high

文件：1.404 Mbytes 页数：14 Pages

Infineon

英飞凌