IPT65R080CFD7

Marking：65R080F7；Package：PG-HSOF-8；650V CoolMOSª CFD7 SJ Power Device

Features •Ultra-fastbodydiode •650Vbreakdownvoltage •Best-in-classRDS(on) •Reducedswitchinglosses •LowRDS(on)dependencyovertemperature Benefits •Excellenthardcommutationruggedness •Extrasafetymarginfordesignswithincreasedbusvoltage •Enablingincreasedpowe

IPT65R080CFD7XTMA1

Package：8-PowerSFN；包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：HIGH POWER_NEW

IPDQ65R080CFD7

MOSFET650VCoolMOSªCFD7SJPowerDevice

Features •Ultra-fastbodydiode •650Vbreakdownvoltage •Best-in-classRDS(on) •Reducedswitchinglosses •LowRDS(on)dependencyovertemperature

IPDQ65R080CFD7A

MOSFET650VCoolMOSªCFD7ASJPowerDevice

Features •Latest650Vautomotivequalifiedtechnologywithintegratedfastbody diodeonthemarketfeaturingultralowQrr •LowestFOMRDS(on)*QgandRDS(on)*Eoss •100%avalanchetested •Best-in-classRDS(on)inSMDandTHDpackages Benefits •Lowerswitchinglossesenablinghigh