丝印：3N12030；Package：PG-HDSOP-16；MOSFET OptiMOSTM3 Power-Transistor, 120 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • 100 avalanche tested • Optimized for motor drives and battery powered applications. • Optimized for top side cooling. • Ideal for battery management switch application • Su

文件：1.61972 Mbytes 页数：13 Pages

INFINEON

英飞凌

OptiMOS ™功率 MOSFET 120 V，采用 TOLT 封装

\n优势:\n• High power density\n• Improved thermal management\n• High system efficiency and less paralleling required;

Infineon

英飞凌

TO-251AA-3

INFINEON

英飞凌

上传：深圳市宇集芯电子有限公司

N/A

5000

上传：深圳市亿智腾科技有限公司

TO247

INFINEON

英飞凌

上传：深圳市拓亿芯电子有限公司