丝印：3N12030；Package：PG-HDSOP-16；MOSFET OptiMOSTM3 Power-Transistor, 120 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • 100 avalanche tested • Optimized for motor drives and battery powered applications. • Optimized for top side cooling. • Ideal for battery management switch application • Su

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