丝印：3N65M6；Package：DPAK；N-channel 650 V, 1.4 Ω typ., 3.5 A MDmesh M6 Power MOSFET in a DPAK package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Applications • Switching applications Description The new MDmesh M6 technology incorporates the most recent advancements to the wel

文件：630.19 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体