丝印：3P0；Package：SMV；300 mA CMOS Low Drop-Out Regulator with inrush current protection circuit

The TCR3DF series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and low inrush current. These voltage regulators are available in fixed output voltages between 1.0 V and 4.5 V and capable of driving

文件：839.87 Kbytes 页数：14 Pages

TOSHIBA

东芝

丝印：3P0；Package：DFN4；300 mA CMOS Low Drop-Out Regulator with inrush current protection circuit

The TCR3DM series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and low inrush current. These voltage regulators are available in fixed output voltages between 1.0 V and 4.5 V and capable of drivi

文件：460.78 Kbytes 页数：14 Pages

TOSHIBA

东芝

丝印：3P0；Package：DFN4D；TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic

Features Ultra small packag e DFN4D (1.0 mm x 1.0 mm; t 0.3 7 mm (typ.)) Wide range output voltage line up (V OUT = 1.0 to 4.5 V) L ow dropout voltage V DO = 175 mV (typ.) at 3.3 V output, I OUT = 300 mA V DO = 21 6 mV (typ.) at 2.5 V output, I OUT = 300 mA V DO = 2 9 7 mV (typ.) at 1.8 V

文件：749.18 Kbytes 页数：20 Pages

TOSHIBA

东芝

丝印：3P0；Package：DFN5B；800 mA CMOS Ultra Low Dropout Regulator

1. Description The TCR8BM series are CMOS single-output voltage regulators with an on/off control input, featuring ultra low dropout voltage, high PSRR, low inrush current and fast load transient response. A differentiating feature is the use of a secondary bias rail as a reference voltage that

文件：1.18428 Mbytes 页数：15 Pages

TOSHIBA

东芝

丝印：3P04A；Package：SOT23-3L；-40V P-Channel Enhancement Mode MOSFET

Features - VDS = -40V ID =-3.0A - RDS(ON)

文件：794.03 Kbytes 页数：7 Pages

APME

永源微电子

丝印：3P06-；Package：SOT23L；-60V P-Channel Enhancement Mode MOSFET

Features - VDS = -60V ID =-2.8A - RDS(ON)

文件：1.30334 Mbytes 页数：7 Pages

APME

永源微电子

丝印：3P0XQ；Package：SOT-23(DBZ)；LM4060-Q1 Automotive 20ppm/°C Maximum Drift High Precision Shunt Voltage Reference

1 Features • AEC-Q100 qualified with the following results: – Device temperature grade 1: –40°C to +125°C ambient operating temperature TA • Low operating current: – 40μA typical • Initial accuracy: ±0.05 % (maximum) • Temperature coefficient: – 6ppm/°C typical for −40°C to 125°C • Wi

文件：1.17463 Mbytes 页数：24 Pages

TI

德州仪器

丝印：3P010A；Package：PMPAK5x6；P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：72.57 Kbytes 页数：6 Pages

A-POWER

富鼎先进电子

丝印：3P010；Package：TO-252；P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：74.54 Kbytes 页数：6 Pages

A-POWER

富鼎先进电子

丝印：3P010；Package：SO-8；P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：73.38 Kbytes 页数：6 Pages

A-POWER

富鼎先进电子