丝印：3P6；Package：SOD-123FL；ZENER DIODE

Features · For surface mounted applications in order to optimize board space · Low profile space · Glass passivated chip · High reliability · For use in stabilizing and clipping circuits with high power rating · Standard voltage tolerance is ± 5

文件：426.95 Kbytes 页数：2 Pages

DAESAN

丝印：3P6；Package：SMV；300 mA CMOS Low Drop-Out Regulator with inrush current protection circuit

The TCR3DF series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and low inrush current. These voltage regulators are available in fixed output voltages between 1.0 V and 4.5 V and capable of driving

文件：839.87 Kbytes 页数：14 Pages

TOSHIBA

东芝

丝印：3P6；Package：DFN4；300 mA CMOS Low Drop-Out Regulator with inrush current protection circuit

The TCR3DM series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and low inrush current. These voltage regulators are available in fixed output voltages between 1.0 V and 4.5 V and capable of drivi

文件：460.78 Kbytes 页数：14 Pages

TOSHIBA

东芝

丝印：3P6；Package：DFN4D；TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic

Features Ultra small packag e DFN4D (1.0 mm x 1.0 mm; t 0.3 7 mm (typ.)) Wide range output voltage line up (V OUT = 1.0 to 4.5 V) L ow dropout voltage V DO = 175 mV (typ.) at 3.3 V output, I OUT = 300 mA V DO = 21 6 mV (typ.) at 2.5 V output, I OUT = 300 mA V DO = 2 9 7 mV (typ.) at 1.8 V

文件：749.18 Kbytes 页数：20 Pages

TOSHIBA

东芝

丝印：3P6；Package：DFN5B；800 mA CMOS Ultra Low Dropout Regulator

1. Description The TCR8BM series are CMOS single-output voltage regulators with an on/off control input, featuring ultra low dropout voltage, high PSRR, low inrush current and fast load transient response. A differentiating feature is the use of a secondary bias rail as a reference voltage that

文件：1.18428 Mbytes 页数：15 Pages

TOSHIBA

东芝

丝印：3P6；Package：DO-214AC；Plastic package has Underwriters Laboratory Flammability Classification 94 V-0

文件：506.08 Kbytes 页数：4 Pages

LEIDITECH

雷卯电子

丝印：3P6R0；Package：TO-263；P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：74.46 Kbytes 页数：6 Pages

A-POWER

富鼎先进电子

THYRISTORS 3 A MOLD SCR

The 3P4MH and 3P6MH are P-gate fully diffused mold SCRs with an average on-current of 3 A. The repeat peak offvoltages (and reverse voltages) are 400 V and 600 V. FEATURES • This transistor features a small and lightweight package and is easy to handle even on the mounting surface due to its

文件：373.15 Kbytes 页数：8 Pages

RENESAS

瑞萨

THYRISTORS

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：178.08 Kbytes 页数：6 Pages

NEC

瑞萨

Trench MOS Barrier Schottky Rectifier

文件：637.04 Kbytes 页数：3 Pages

YFWDIODE

佑风微电子