ADL5505ACBZ-P2

Marking：3R；Package：WLCSP；450 MHz to 6000 MHz TruPwr Detector

FEATURES Truermsresponsedetector Excellenttemperaturestability ±0.25dBrmsdetectionaccuracyvs.temperature Over35dBinputpowerdynamicrange,inclusiveofcrestfactor RFbandwidthsfrom450MHzto6000MHz 500Ωinputimpedance Single-supplyoperation:2.5Vto3.3V Lowpower

ADL5505ACBZ-P7

Marking：3R；Package：WLCSP；450 MHz to 6000 MHz TruPwr Detector

FEATURES Truermsresponsedetector Excellenttemperaturestability ±0.25dBrmsdetectionaccuracyvs.temperature Over35dBinputpowerdynamicrange,inclusiveofcrestfactor RFbandwidthsfrom450MHzto6000MHz 500Ωinputimpedance Single-supplyoperation:2.5Vto3.3V Lowpower

BQ29718DSER

Marking：3R；Package：WSON；BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1Features •Inputvoltagerangepack+:VSS–0.3Vto12V •FETdrive: –CHGandDSGFETdriveoutput •VoltagesensingacrossexternalFETsfor overcurrentprotection(OCP)iswithin±5mV (typical) •Faultdetection –Overchargedetection(OVP) –Over-dischargedetection(UVP) –Charge

BQ29718DSET

Marking：3R；Package：WSON；BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1Features •Inputvoltagerangepack+:VSS–0.3Vto12V •FETdrive: –CHGandDSGFETdriveoutput •VoltagesensingacrossexternalFETsfor overcurrentprotection(OCP)iswithin±5mV (typical) •Faultdetection –Overchargedetection(OVP) –Over-dischargedetection(UVP) –Charge

MMBT5771

Marking：3R；Package：SOT-23；PNP Switching Transistor

PNPSwitchingTransistor Thisdeviceisdesignedforveryhighspeedsaturatedswitchingatcollectorcurrentsto100mA.SourcedfromProcess65.SeePN4258forcharacteristics.

MMBT5771

Marking：3R；Package：SOT-23；PNP Switching Transistor

PNPSwitchingTransistor Thisdeviceisdesignedforveryhighspeedsaturatedswitchingatcollectorcurrentsto100mA.SourcedfromProcess65.SeePN4258forcharacteristics.

MP5007DQ

Marking：3R；Package：QFN10；5V, 1A- 5A Programmable Current Limit Switch

DESCRIPTION TheMP5007isaprotectiondevicedesignedtoprotectcircuitryontheoutput(source)fromtransientsoninput(VCC).ItalsoprotectsVCCfromundesiredshortsandtransientscomingfromthesource. Atstartup,inrushcurrentislimitedbylimitingtheslewrateatthesource.The

NTMFSC0D8N04XMTWG

Marking：3R；Package：DFN8；MOSFET - Power, Single N-Channel, DUAL COOL 40 V, 0.78 m, 310 A

Features •AdvancedDual−SidedCoolingPackage •Latest40VPowerMOSFETTechnologyforMotorDrive Applications •ExtremeLowerOn−ResistancetoMinimizeConductionLosses •LowerGateChargetoMinimizeGateDrivingandSwitchingLosses •SoftBodyDiodeReverseRecovery •TheseDevices

PDTA124TE

Marking：3R；Package：SC-75；PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = open

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

PESD3V3S1ULS

Marking：3R；Package：DFN1006BD-2；Unidirectional ESD protection diode

1.Generaldescription UnidirectionalElectroStaticDischarge(ESD)protectiondiodedesignedtoprotectonesignalline fromthedamagecausedbyESDandothertransients.Thedeviceishousedinaleadlessultra smallDFN1006BD-2(SOD882BD)Surface-MountedDevice(SMD)plasticpackagewithsi