丝印：3R；Package：WLCSP；450 MHz to 6000 MHz TruPwr Detector

FEATURES True rms response detector Excellent temperature stability ±0.25 dB rms detection accuracy vs. temperature Over 35 dB input power dynamic range, inclusive of crest factor RF bandwidths from 450 MHz to 6000 MHz 500 Ω input impedance Single-supply operation: 2.5 V to 3.3 V Low power

文件：1.21716 Mbytes 页数：20 Pages

AD

亚德诺

丝印：3R；Package：WLCSP；450 MHz to 6000 MHz TruPwr Detector

FEATURES True rms response detector Excellent temperature stability ±0.25 dB rms detection accuracy vs. temperature Over 35 dB input power dynamic range, inclusive of crest factor RF bandwidths from 450 MHz to 6000 MHz 500 Ω input impedance Single-supply operation: 2.5 V to 3.3 V Low power

文件：1.21716 Mbytes 页数：20 Pages

AD

亚德诺

丝印：3R；Package：WSON；BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1 Features • Input voltage range pack+: VSS – 0.3V to 12V • FET drive: – CHG and DSG FET drive output • Voltage sensing across external FETs for overcurrent protection (OCP) is within ±5mV (typical) • Fault detection – Overcharge detection (OVP) – Over-discharge detection (UVP) – Charge

文件：1.44954 Mbytes 页数：34 Pages

TI

德州仪器

丝印：3R；Package：WSON；BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1 Features • Input voltage range pack+: VSS – 0.3V to 12V • FET drive: – CHG and DSG FET drive output • Voltage sensing across external FETs for overcurrent protection (OCP) is within ±5mV (typical) • Fault detection – Overcharge detection (OVP) – Over-discharge detection (UVP) – Charge

文件：1.44954 Mbytes 页数：34 Pages

TI

德州仪器

丝印：3R；Package：SOT-23；PNP Switching Transistor

PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics.

文件：126.1 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：3R；Package：SOT-23；PNP Switching Transistor

PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics.

文件：473.61 Kbytes 页数：10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：3R；Package：QFN10；5V, 1A- 5A Programmable Current Limit Switch

DESCRIPTION The MP5007 is a protection device designed to protect circuitry on the output (source) from transients on input (VCC). It also protects VCC from undesired shorts and transients coming from the source. At start up, inrush current is limited by limiting the slew rate at the source. The

文件：586.21 Kbytes 页数：11 Pages

MPS

美国芯源

丝印：3R；Package：DFN8；MOSFET - Power, Single N-Channel, DUAL COOL 40 V, 0.78 m, 310 A

Features • Advanced Dual−Sided Cooling Package • Latest 40 V Power MOSFET Technology for Motor Drive Applications • Extreme Lower On−Resistance to Minimize Conduction Losses • Lower Gate Charge to Minimize Gate Driving and Switching Losses • Soft Body Diode Reverse Recovery • These Devices

文件：247.22 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

丝印：3R；Package：SC-75；PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = open

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit driver.

文件：403.41 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：3R；Package：DFN1006BD-2；Unidirectional ESD protection diode

1. General description Unidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a leadless ultra small DFN1006BD-2 (SOD882BD) Surface-Mounted Device (SMD) plastic package with si

文件：229.59 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司