BQ29717DSER

Marking：3Q；Package：WSON；BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1Features •Inputvoltagerangepack+:VSS–0.3Vto12V •FETdrive: –CHGandDSGFETdriveoutput •VoltagesensingacrossexternalFETsfor overcurrentprotection(OCP)iswithin±5mV (typical) •Faultdetection –Overchargedetection(OVP) –Over-dischargedetection(UVP) –Charge

BQ29717DSET

Marking：3Q；Package：WSON；BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1Features •Inputvoltagerangepack+:VSS–0.3Vto12V •FETdrive: –CHGandDSGFETdriveoutput •VoltagesensingacrossexternalFETsfor overcurrentprotection(OCP)iswithin±5mV (typical) •Faultdetection –Overchargedetection(OVP) –Over-dischargedetection(UVP) –Charge

OPT4003DNPRQ1

Marking：3Q；Package：USON；OPT4003-Q1 Automotive High-Speed, High-Precision, Digital Ambient Light Sensor

1Features •AEC-Q100qualifiedforautomotiveapplications: –Temperaturegrade2:–40°Cto+105°C,TA •High-precision,high-speedlight-to-digital conversionoverhigh-speedI2Cinterface •Visiblechannel: –Precisionopticalfilteringcloselymatches humaneyewithexcellentnearinfra

PESD5V0V1BLS

Marking：3Q；Package：DFN1006BD-2；Very low capacitance bidirectional ESD protection diode

1.Generaldescription VerylowcapacitancebidirectionalElectroStaticDischarge(ESD)protectiondiodedesignedto protectonesignallinefromthedamagecausedbyESDandothertransients.Thedeviceishoused inaleadlessultrasmallDFN1006BD-2(SOD882BD)Surface-MountedDevice(SMD)pla

PMN30ENEA

Marking：3Q；Package：TSOP6；40 V N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT457(SC-74)Surface- MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Logic-levelcompatible •ExtendedtemperaturerangeTj=175°C •TrenchMOSFET

RCLAMP3331PQ

Marking：3Q；RailClamp® Low Capacitance ESD and EOS Protection

Description RClamp®3331PQisspecificallydesignedtoprovide secondarysurgeandESDprotectiononantennasand high-speeddataports.RClamp3331PQutilizessnapback or“crow-bar”technologytominimizedevice clampingvoltage.Itfeatureshighsurgecurrent capabilityof10A(tp=8/20μs).E

TDZ9V1J

Marking：3Q；Package：SOD323F；Single Zener diodes

1.1Generaldescription General-purposeZenerdiodesinaSOD323F(SC-90)verysmallandflatlead Surface-MountedDevice(SMD)plasticpackage. 1.2Featuresandbenefits 1.3Applications Generalregulationfunctions Non-repetitivepeakreversepower dissipation:180W Lowdifferen

TL431QPK

Marking：3Q；Package：SOT-89；TL431, TL432 Precision Programmable Reference

1Features •Referencevoltagetoleranceat25°C –0.5%(Bgrade) –1%(Agrade) –2%(Standardgrade) •Adjustableoutputvoltage:Vrefto36V •Operationfrom−40°Cto125°C •Typicaltemperaturedrift(TL43xB) –6mV(Ctemp) –14mV(Itemp,Qtemp) •LowOutputNoise •0.

TL431QPK

Marking：3Q；Package：SOT-89；TL431, TL432 Precision Programmable Reference

1Features •Referencevoltagetoleranceat25°C –0.5(Bgrade) –1(Agrade) –2(Standardgrade) •Adjustableoutputvoltage:Vrefto36V •Operationfrom−40°Cto125°C •Typicaltemperaturedrift(TL43xB) –6mV(Ctemp) –14mV(Itemp,Qtemp) •LowOutputNoise •0.2-ΩTypical

TL431QPK

Marking：3Q；Package：SOT-89；TL431, TL432 Precision Programmable Reference

1Features •Referencevoltagetoleranceat25°C –0.5(Bgrade) –1(Agrade) –2(Standardgrade) •Adjustableoutputvoltage:Vrefto36V •Operationfrom−40°Cto125°C •Typicaltemperaturedrift(TL43xB) –6mV(Ctemp) –14mV(Itemp,Qtemp) •LowOutputNoise •0.2-ΩTypical