丝印：3Q；Package：WSON；BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1 Features • Input voltage range pack+: VSS – 0.3V to 12V • FET drive: – CHG and DSG FET drive output • Voltage sensing across external FETs for overcurrent protection (OCP) is within ±5mV (typical) • Fault detection – Overcharge detection (OVP) – Over-discharge detection (UVP) – Charge

文件：1.44954 Mbytes 页数：34 Pages

TI

德州仪器

丝印：3Q；Package：WSON；BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1 Features • Input voltage range pack+: VSS – 0.3V to 12V • FET drive: – CHG and DSG FET drive output • Voltage sensing across external FETs for overcurrent protection (OCP) is within ±5mV (typical) • Fault detection – Overcharge detection (OVP) – Over-discharge detection (UVP) – Charge

文件：1.44954 Mbytes 页数：34 Pages

TI

德州仪器

丝印：3Q；Package：USON；OPT4003-Q1 Automotive High-Speed, High-Precision, Digital Ambient Light Sensor

1 Features • AEC-Q100 qualified for automotive applications: – Temperature grade 2: –40°C to +105°C, TA • High-precision, high-speed light-to-digital conversion over high-speed I2C interface • Visible channel: – Precision optical filtering closely matches human eye with excellent near infra

文件：1.90031 Mbytes 页数：48 Pages

TI

德州仪器

丝印：3Q；Package：DFN1006BD-2；Very low capacitance bidirectional ESD protection diode

1. General description Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a leadless ultra small DFN1006BD-2 (SOD882BD) Surface-Mounted Device (SMD) pla

文件：228.24 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：3Q；Package：TSOP6；40 V N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Extended temperature range Tj = 175 °C • Trench MOSFET

文件：263.13 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：3Q；RailClamp® Low Capacitance ESD and EOS Protection

Description RClamp®3331PQ is specifically designed to provide secondary surge and ESD protection on antennas and high-speed data ports. RClamp3331PQ utilizes snapback or “crow-bar” technology to minimize device clamping voltage. It features high surge current capability of 10A (tp=8/20μs). E

文件：551.08 Kbytes 页数：7 Pages

SEMTECH

先之科

丝印：3Q；Package：SOD323F；Single Zener diodes

1.1 General description General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits 1.3 Applications  General regulation functions  Non-repetitive peak reverse power dissipation:  180 W  Low differen

文件：995.99 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：3Q；Package：SOT-89；TL431, TL432 Precision Programmable Reference

1 Features • Reference voltage tolerance at 25°C – 0.5% (B grade) – 1% (A grade) – 2% (Standard grade) • Adjustable output voltage: Vref to 36V • Operation from −40°C to 125°C • Typical temperature drift (TL43xB) – 6mV (C temp) – 14mV (I temp, Q temp) • Low Output Noise • 0.

文件：2.99099 Mbytes 页数：79 Pages

TI

德州仪器

丝印：3Q；Package：SOT-89；TL431, TL432 Precision Programmable Reference

1 Features • Reference voltage tolerance at 25°C – 0.5 (B grade) – 1 (A grade) – 2 (Standard grade) • Adjustable output voltage: Vref to 36 V • Operation from −40°C to 125°C • Typical temperature drift (TL43xB) – 6 mV (C temp) – 14 mV (I temp, Q temp) • Low Output Noise • 0.2-Ω Typical

文件：2.87468 Mbytes 页数：78 Pages

TI

德州仪器

丝印：3Q；Package：SOT-89；TL431, TL432 Precision Programmable Reference

1 Features • Reference voltage tolerance at 25°C – 0.5 (B grade) – 1 (A grade) – 2 (Standard grade) • Adjustable output voltage: Vref to 36 V • Operation from −40°C to 125°C • Typical temperature drift (TL43xB) – 6 mV (C temp) – 14 mV (I temp, Q temp) • Low Output Noise • 0.2-Ω Typical

文件：3.08309 Mbytes 页数：83 Pages

TI

德州仪器