丝印：3N170；Package：TO-247；N-channel 1700 V, 7 Ω typ., 2.6 A PowerMESH™ Power MOSFETs in TO-247 and TO-247 long leads packages

Features  Intrinsic capacitances and Qg minimized  High speed switching  100 avalanche tested Applications  Switching applications Description This Power MOSFET is designed using the STMicroelectronics consolidated strip-layoutbased MESH OVERLAY™ process. The result is a product

文件：740.64 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：3N170；Package：TO-247；N-channel 1700 V, 7 Ω typ., 2.6 A PowerMESH™ Power MOSFETs in TO-247 and TO-247 long leads packages

Features  Intrinsic capacitances and Qg minimized  High speed switching  100 avalanche tested Applications  Switching applications Description This Power MOSFET is designed using the STMicroelectronics consolidated strip-layoutbased MESH OVERLAY™ process. The result is a product

文件：740.64 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：3N170；Package：TO-247；N-channel 1700 V, 7 Ω typ., 2.6 A PowerMESH™ Power MOSFETs in TO-247 and TO-247 long leads packages

Features  Intrinsic capacitances and Qg minimized  High speed switching  100 avalanche tested Applications  Switching applications Description This Power MOSFET is designed using the STMicroelectronics consolidated strip-layoutbased MESH OVERLAY™ process. The result is a product

文件：740.64 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：3N170；Package：TO-247；N-channel 1700 V, 7 Ω typ., 2.6 A PowerMESH™ Power MOSFETs in TO-247 and TO-247 long leads packages

Features  Intrinsic capacitances and Qg minimized  High speed switching  100 avalanche tested Applications  Switching applications Description This Power MOSFET is designed using the STMicroelectronics consolidated strip-layoutbased MESH OVERLAY™ process. The result is a product

文件：740.64 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：3N170；Package：TO-3PF；N-channel 1700 V, 7 廓 typ., 2.6 A PowerMESH??Power MOSFET in a TO-3PF package

文件：702.3 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-Channel Enhancement Mode MOSFET Switch

FEATURES • Low Switching Voltages • Fast Switching Times • Low Drain-Source Resistance • Low Reverse Transfer Capacitance

文件：22.48 Kbytes 页数：2 Pages

Calogic

N-CHANNEL MOSFET ENHANCEMENT MODE

FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds(on) ≤ 200Ω FAST SWITCHING td(on) ≤ 3.0ns

文件：210.36 Kbytes 页数：2 Pages

LINEAR

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

文件：4.13074 Mbytes 页数：122 Pages

Intersil

MOSFET SWITCHING

MOSFET SWITCHING N-CHANNEL - ENHANCEMENT

文件：119.25 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-CHANNEL MOSFET ENHANCEMENT MODE

FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds(on) ≤ 200Ω FAST SWITCHING td(on) ≤ 3.0ns

文件：210.36 Kbytes 页数：2 Pages

LINEAR