STW3N170

Marking：3N170；Package：TO-247；N-channel 1700 V, 7 Ω typ., 2.6 A PowerMESH™ Power MOSFETs in TO-247 and TO-247 long leads packages

Features IntrinsiccapacitancesandQgminimized Highspeedswitching 100avalanchetested Applications Switchingapplications Description ThisPowerMOSFETisdesignedusingthe STMicroelectronicsconsolidatedstrip-layoutbased MESHOVERLAY™process.Theresultis aproduct

STW3N170

Marking：3N170；Package：TO-247；N-channel 1700 V, 7 Ω typ., 2.6 A PowerMESH™ Power MOSFETs in TO-247 and TO-247 long leads packages

Features IntrinsiccapacitancesandQgminimized Highspeedswitching 100avalanchetested Applications Switchingapplications Description ThisPowerMOSFETisdesignedusingthe STMicroelectronicsconsolidatedstrip-layoutbased MESHOVERLAY™process.Theresultis aproduct

3N170

MOSFETSWITCHING

MOSFETSWITCHING N-CHANNEL-ENHANCEMENT

3N170

P-CHANNELJFET

GENERALINFORMATION/CROSSREFERENCES

3N170

N-CHANNELMOSFETENHANCEMENTMODE

FEATURES DirectReplacementforINTERSIL3N170&3N171 LOWDRAINTOSOURCERESISTANCErds(on)≤200Ω FASTSWITCHINGtd(on)≤3.0ns

3N170

N-ChannelEnhancementModeMOSFETSwitch

FEATURES •LowSwitchingVoltages •FastSwitchingTimes •LowDrain-SourceResistance •LowReverseTransferCapacitance

3N170

anenhancementmodeN-ChannelMosfet

LS3N170

anenhancementmodeN-ChannelMosfet

NCE3N170

N-ChannelEnhancementModePowerMOSFET

GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications. Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications

NCE3N170D

N-ChannelEnhancementModePowerMOSFET

GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications. Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications