丝印：3N5；Package：ESV；200 mA CMOS Low Dropout Regulator with Fast Load Transient Response

The TCR2EF and TCR2EE series are CMOS single output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and fast load transient response. These voltage regulators are available in fixed output voltages between 1.0 V and 5.0 V and capable of

文件：1.52347 Mbytes 页数：17 Pages

TOSHIBA

东芝

丝印：3N5；Package：DFN5B；500 mA CMOS Ultra Low Dropout Regulator

1. Description The TCR5BM series are CMOS single-output voltage regulators with an on/off control input, featuring ultra low dropout voltage, high PSRR, low inrush current and fast load transient response. A differentiating feature is the use of a secondary bias rail as a reference voltage that

文件：1.36844 Mbytes 页数：16 Pages

TOSHIBA

东芝

丝印：3N5；Package：SOT-26；N-CHANNEL ENHANCEMENT MODE MOSFET

文件：116.77 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：3N5F；Package：SOT；TSDxx Unidirectional TVS Diodes in SOD-323

1 Features • IEC 61000-4-2 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection: – 25-60A (8/20μs) • IO capacitance

文件：949.14 Kbytes 页数：17 Pages

TI

德州仪器

Fast Switching

• FEATURES • Drain Current ID= 3A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 3.0Ω (Max) • Fast Switching • APPLICATIONS • Switching power supplies,converters,AC and DC motor controls

文件：49.87 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

• FEATURES • Drain Current ID= 3A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 3.0Ω (Max) • Fast Switching • APPLICATIONS • Switching power supplies,converters,AC and DC motor controls

文件：166.29 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala

文件：297.51 Kbytes 页数：7 Pages

UTC

友顺

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala

文件：297.51 Kbytes 页数：7 Pages

UTC

友顺

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala

文件：297.51 Kbytes 页数：7 Pages

UTC

友顺

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala

文件：297.51 Kbytes 页数：7 Pages

UTC

友顺