Fast Switching

• FEATURES • Drain Current ID= 3A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 3.0Ω (Max) • Fast Switching • APPLICATIONS • Switching power supplies,converters,AC and DC motor controls

文件：49.87 Kbytes 页数：2 Pages

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无锡固电

3 Amps, 500 Volts N-CHANNEL POWER MOSFET

文件：173.79 Kbytes 页数：6 Pages

UTC

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3A, 500V N-CHANNEL POWER MOSFET

文件：181.85 Kbytes 页数：6 Pages

UTC

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3A, 500V N-CHANNEL  POWER MOSFET

The UTC 3N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutatio • RDS(ON)=3.2Ω @ VGS=10V \n• 100% Avalanche Tested;

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isc N-Channel MOSFET Transistor

• FEATURES • Drain Current ID= 3A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 3.0Ω (Max) • Fast Switching • APPLICATIONS • Switching power supplies,converters,AC and DC motor controls

文件：166.29 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala

文件：297.51 Kbytes 页数：7 Pages

UTC

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N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala

文件：297.51 Kbytes 页数：7 Pages

UTC

友顺

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala

文件：297.51 Kbytes 页数：7 Pages

UTC

友顺

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala

文件：297.51 Kbytes 页数：7 Pages

UTC

友顺

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala

文件：297.51 Kbytes 页数：7 Pages

UTC

友顺