采用开尔文源概念的新型 SMD 封装

For the first time the CoolMOS™ C7 Gold superjunction MOSFET series (G7) brings together the benefits of the improved 600V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high curre CoolMOS™ C7 Gold SJ MOSFET\n • Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G\n• Enables best-in-class R DS(on) in smallest footprint\nTO-Leadless package\n • Inbuilt 4 th pin Kelvin source configuration and low parasitic source inductance (~1nH)\n• Is MSL1 compliant, total Pb-free, has eas;

Infineon

英飞凌

丝印：60R102G7；Package：PG-HSOF-8；600V CoolMOS짧 G7 Power Transistor

文件：967.28 Kbytes 页数：14 Pages

INFINEON

英飞凌

600V CoolMOS??G7 Power Transistor

文件：1.13669 Mbytes 页数：14 Pages

INFINEON

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TO-251AA-3

INFINEON

英飞凌

上传：深圳市宇集芯电子有限公司

N/A

5000

上传：深圳市亿智腾科技有限公司