英飞凌对谐振高功率拓扑的回答

\n优势:\n• Best-in-class hard commutation ruggedness\n• Highest reliability for resonant topologies\n• Highest efficiency with outstanding ease-of-use/performance trade-off\n• Enabling increased power density solutions;

Infineon

英飞凌

丝印：60R090F7；Package：PG-HSOF-8；600V CoolMOS짧 CFD7 Power Transistor

文件：1.27645 Mbytes 页数：14 Pages

INFINEON

英飞凌

600V CoolMOSª CFD7 Power Transistor

Features • Ultra-fast body diode • Low gate charge • Best-in-class reverse recovery charge (Qrr) • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • Best-in-class RDS(on) in SMD and THD packages

文件：1.3803 Mbytes 页数：14 Pages

INFINEON

英飞凌

MOSFET 600V CoolMOS짧 CFD7 Power Transistor

MOSFET 600V CoolMOSª CFD7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS™ CFD7 is the successor to the CoolMOS™ CFD2 series and is an opti

文件：1.26158 Mbytes 页数：14 Pages

INFINEON

英飞凌

600V CoolMOS??CFD7 Power Transistor

文件：1.04526 Mbytes 页数：14 Pages

INFINEON

英飞凌

600V CoolMOS짧 CFD7 Power Transistor

文件：1.73195 Mbytes 页数：14 Pages

INFINEON

英飞凌